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W. Y. ZHANG1,2,* , D. K. HE2, Z. Z. LIU1, L. J. SUN2, Z. X. FU2
Transparent conducting Al-doped zinc oxide (AZO) thin films have been fabricated on quartz substrates by single source CVD system. Effects of annealing temperature and Al-doping concentration on the optical and electrical properties of AZO films were investigated. AZO film with Al/Zn ratio of 1 % annealed at 700 ℃ has high optical transmittance of 88.2 % and low electrical resistivity of 1.85×10-2 Ωcm. Hall measurements and absorption edge analysis demonstrate that resistivity of AZO films is determined by carrier concentration rather than carrier mobility.
Chemical vapor deposition, AZO, Thin film.
W. Y. ZHANG, D. K. HE, Z. Z. LIU, L. J. SUN, Z. X. FU, Preparation of transparent conducting Al-doped ZnO thin films by single source chemical vapor deposition, Optoelectronics and Advanced Materials - Rapid Communications, 4, 11, November 2010, pp.1651-1654 (2010).
Submitted at: Sept. 28, 2010
Accepted at: Nov. 10, 2010
Optoelectronics and Advanced Materials - Rapid Communications
(2023): 0.5 - 2023 Journal Citation Reports (Clarivate Analytics, 2024)
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