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Proposed p erformance enhancement of GaN based blue light emitting diodes with a step graded electron blocking layer

JUN CHEN1,2,* , SHUWEN ZHENG2, GUANGHAN FAN2, WEI PANG1, YUNYAN ZHANG2

Affiliation

  1. Experimental Teaching Department, Guangdong University of Technol ogy , 100 Waihuan Xi Road, Guangzhou Higher Education Mega Center, Guangzhou 510006, China
  2. Institute of Opto Electronic Materials and Technology, South China Normal University, 55 Zhongshan Ave Wes, Guangzhou 510631,China

Abstract

The properties of GaN based blue light emitting diodes (LEDs) with a step graded AlGaN electron blocking layer (EBL) are investigated numerically. The proposed design exhibits a improved efficiency droop and superior optical characteristics compared with the conventional LEDs. The sim ulation results indicate that a reduction of electron spillover and a higher efficiency of hole injection can be achieved by using the proposed design. Furthermore, it is found that the significant decrease of electrostatic fields near the last quantum bar rier and the E BL might be one of the key reasons for these improvements..

Keywords

Electron blocking layer, Light emitting diodes, Internal quantum efficiency.

Citation

JUN CHEN, SHUWEN ZHENG, GUANGHAN FAN, WEI PANG, YUNYAN ZHANG, Proposed p erformance enhancement of GaN based blue light emitting diodes with a step graded electron blocking layer, Optoelectronics and Advanced Materials - Rapid Communications, 7, 1-2, January-February 2013, pp.1-5 (2013).

Submitted at: Aug. 10, 2012

Accepted at: Feb. 20, 2013