Our site saves small pieces of text information (cookies) on your device in order to deliver better content and for statistical purposes. You can disable the usage of cookies by changing the settings of your browser. By browsing our site without changing the browser settings you grant us permission to store that information on your device.
XIQING LIU1,* , XINZHU SANG1, XIAOXIA LIU1, BINBIN YAN1, KUIRU WANG1, CHONGXIU YU1
Dual-order silicon Raman Amplifiers are analyzed and numerically discussed. The effect of relative intensity noise (RIN) transferred from second-order pump to signal in 1-cm long chip scale silicon Raman amplifiers is investigated. Similar to single-order silicon Raman Amplifiers, −3dB corner frequency of RIN transfer function in second-order silicon Raman Amplifiers is almost the same as that in single-order silicon Raman Amplifiers due to lack of sufficient “walk off” in short waveguide length. The noise figure of dual-order silicon Raman amplifiers is deteriorated than single-order silicon Raman Amplifiers.
Dual-order silicon Raman amplifiers, Noise figure, Silicon-on-insulator technology, Raman scattering.
XIQING LIU, XINZHU SANG, XIAOXIA LIU, BINBIN YAN, KUIRU WANG, CHONGXIU YU, Pump-to-signal RIN transfer in dual-order silicon Raman amplifiers, Optoelectronics and Advanced Materials - Rapid Communications, 4, 7, July 2010, pp.929-933 (2010).
Submitted at: June 6, 2010
Accepted at: July 14, 2010
Optoelectronics and Advanced Materials - Rapid Communications
(2023): 0.5 - 2023 Journal Citation Reports (Clarivate Analytics, 2024)
Active accounts were imported to the new platform and assigned a random password by default. In order to access your account you need to access the login page and go through the Lost Password dialog (involves the system sending you an email with instructions) in order to reset your password. This step is necessary as passwords are kept in hashed form and the new platform uses modern hashing algorithms incompatible with the previous ones.