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Pyramidal morphology of InN thin films deposited by reactive RF-magnetron sputtering

N. C. ZOITA1,* , C. BESLEAGA1, L. BRAIC1, M.VLAICU2

Affiliation

  1. National Institute for Optoelectronics, P.O.Box MG-5, RO 077125, Bucharest, Romania
  2. National Institute for Materials Physics, P.O.Box MG-7, RO 077125, Bucharest, Romania

Abstract

High density of pyramidal three-dimensional (3D) nano-islands of InN material deposited on AlN /quartz surface with an average aspect ratio of about 0.43 was observed by means of atomic force microscopy (AFM) imaging. The coatings were obtained by reactive radio-frequency (RF) magnetron sputtering method. It was identified a transition from two-dimensional (2D) to 3D growth mode of the InN material. The optical, structural and morphological characterization data are presented.

Keywords

Indium nitride, Pyramidal 3D nano-islands, RF-magnetron sputtering.

Citation

N. C. ZOITA, C. BESLEAGA, L. BRAIC, M.VLAICU, Pyramidal morphology of InN thin films deposited by reactive RF-magnetron sputtering, Optoelectronics and Advanced Materials - Rapid Communications, 2, 12, December 2008, pp.796-797 (2008).

Submitted at: Sept. 30, 2008

Accepted at: Dec. 4, 2008