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Raman and infrared spectroscopic study of the defect spinel In21.333S32

HAIZHENG TAO1,* , HAOCHUN ZANG1, GUOPING DONG1, JIANMIN ZENG2, XIUJIAN ZHAO1

Affiliation

  1. Key Laboratory of Silicate Materials Science and Engineering (Wuhan University of Technology), Ministry of Education, Wuhan 430070, China
  2. Guangxi Key Laboratory for the advanced Materials and New Preparation Technologies, Guangxi 541004, China

Abstract

In this paper, the polycrystal defect spinel In21.333S32 (JCPDF No: 84-1385; Sys: Cubic; Lattice: Face-centered) was prepared utilizing the melt-slowly cooling method and its unpolarized and polarized Raman spectra together with the infrared transmission one were studied in detail. Based on microstructural features of defect spinel In21.333S32 (the random distribution of vacancies and indium atoms on tetrahedral sites as well as the strong distortion of octahedral sites) and the polarized spectroscopic characterization, the two strongest peaks at 305 cm-1 and 245 cm-1 were ascribed to the so-called clustering modes, i.e., the A1g symmetric stretching vibrating mode (ν1) of tetrahedral InS4 and octahedral InS6 respectively. In addition, the ascriptions of the distinct peaks or valleys on Raman and infrared spectra of defect spinel In21.333S32 were further proposed in this paper.

Keywords

Raman spectroscopy, Infrared spectroscopy, In2S3.

Citation

HAIZHENG TAO, HAOCHUN ZANG, GUOPING DONG, JIANMIN ZENG, XIUJIAN ZHAO, Raman and infrared spectroscopic study of the defect spinel In21.333S32, Optoelectronics and Advanced Materials - Rapid Communications, 2, 6, June 2008, pp.356-359 (2008).

Submitted at: April 29, 2008

Accepted at: June 5, 2008