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LIANG CHEN1,2,* , YUNSHENG QIAN1, BENKANG CHANG1
To achieve high quantum efficiency and good stability has been a main direction to develop GaAs photocathodes recently. The performance of GaAs photocathodes lies on the electron diffusion length and activation techniques. In this paper, we discuss the feasibility of measuring the electron diffusion length of photocathodes by surface photovoltage wave from theory and deduce the calculation equations. The principle of the surface photovoltage wave and the measuring techniques are discussed particularly using the electro-static equilibrium condition and the consideration of energy-valley scattering and surface barriers. Through experiments, the fitting calculation curve and experiment curve fit very well. The surface photovoltage fitting calculation in consideration of energy valley scattering shows a better method to study the material properties and activation techniques for GaAs photocathodes.
GaAs photocathode, Surface photovoltage, Electron diffusion length.
LIANG CHEN, YUNSHENG QIAN, BENKANG CHANG, Research on surface photovoltage for GaAs photocathodes, Optoelectronics and Advanced Materials - Rapid Communications, 4, 12, December 2010, pp.1964-1967 (2010).
Submitted at: Oct. 15, 2010
Accepted at: Nov. 29, 2010
Optoelectronics and Advanced Materials - Rapid Communications
(2023): 0.5 - 2023 Journal Citation Reports (Clarivate Analytics, 2024)
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