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DEMIN KONG1,* , AIHUA LIU1, JINJIN GUO1, BAOYUAN MAN1, MEI LIU1, SHOUZHEN JIANG1, JUAN HOU1
High-quality ZnO/ - Ga2O3 (ZGO) films were fabricated on the sapphire substrates at the high vacuum atmosphere by laser molecular beam epitaxy (LMBE). The influence of substrate temperature in the ZGO film was researched. Moreover, - Ga2O3 film was fabricated to compare to the ZGO films. It stated that the root mean square (RMS) of ZGO films has a tendency of becoming small with the substrate temperature increasing and X-ray diffraction peaks showed that the crystallization quality of ZGO films is best at 750 ℃ substrate temperature. With the increasing of the substrate temperature, the transmittance of ZGO films tended to high in the deep ultraviolet region..
ZGO film, Deep ultraviolet, Gallium oxide, Zinc oxide.
DEMIN KONG, AIHUA LIU, JINJIN GUO, BAOYUAN MAN, MEI LIU, SHOUZHEN JIANG, JUAN HOU, Research on the property of deep ultraviolet transparent ZnO/β- Ga2O3 ZGO films in contrast to β- Ga2O3 films, Optoelectronics and Advanced Materials - Rapid Communications, 6, 11-12, November-December 2012, pp.1004-1008 (2012).
Submitted at: July 30, 2012
Accepted at: Oct. 30, 2012
Optoelectronics and Advanced Materials - Rapid Communications
(2023): 0.5 - 2023 Journal Citation Reports (Clarivate Analytics, 2024)
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