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Residual impurities on fused silica surface processed by different technics and their effect s on laser induced damage at 355nm

LIU HONGJIE1, HUANG JIN1, YE XIN1, SUN LAIXI1, WANG FENGRUI1, GENG FENG1, JIANG XIAODONG1,* , WU WEIDONG1,2, ZHENG WANGUO1

Affiliation

  1. Research Center of Laser Fusion, China Academy of Engineering Physics, Mianyang 621900, China
  2. IFSA Coll aborative Innovation Center, Shanghai Jiao Tong University, Shanghai 200240, China

Abstract

Laser induced damage on fused silica surface at fluences and intensi ties far below the intrinsic damage threshold is often ignited by absorbing impurities introduced by polishing or post processing . This paper reports the residual impurities on fused silica surface under different polishing and post processing conditions a nd their impacts on laser induced damage at 355nm . The impurities on fused silica surface are detected by time of flight secondary ion mass spectrometry. The relative content s of metal impurities and their distribution as a function of depth from the surfa ce are acquired. Laser induced damage threshold and damage density are measured by a 9.3 ns (FWHM), tripled Nd:YAG laser. The impact s of impurities on laser induced damage of fused silica surface is analyzed. The results show that the contamination of magnetorheological finishing fuild also decreases damage performance of fused silica similar to conventional polishing powder. Strongly acidic solution can remove nearly all of metal impurities and no new contamination is introduced at the etching depth of 20 µm. The results can provide technique support for improving laser induced damage performance of fused silica..

Keywords

Residual impurities, Conventional polishing, Magnetorheological finishing, Wet chemical etching, Fused silica.

Citation

LIU HONGJIE, HUANG JIN, YE XIN, SUN LAIXI, WANG FENGRUI, GENG FENG, JIANG XIAODONG, WU WEIDONG, ZHENG WANGUO, Residual impurities on fused silica surface processed by different technics and their effect s on laser induced damage at 355nm, Optoelectronics and Advanced Materials - Rapid Communications, 9, 11-12, November-December 2015, pp.1406-1410 (2015).

Submitted at: Sept. 30, 2015

Accepted at: Oct. 28, 2015