"

Cookies ussage consent

I agree.

Our site saves small pieces of text information (cookies) on your device in order to deliver better content and for statistical purposes. You can disable the usage of cookies by changing the settings of your browser. By browsing our site without changing the browser settings you grant us permission to store that information on your device.

Robust modeling of SOI-based optical phase modulator using free carrier dispersion effect

B. MARDIANA1,2,* , P. SUSTHITHA MENON1, SAHBUDIN SHAARI1, H. HAZURA1,2, A. R. HANIM1,2, N. ARSAD1

Affiliation

  1. Photonics Technology Laboratory (PTL), Institute of Micro Engineering and Nanoelectronics (IMEN), Universiti Kebangsaan Malaysia, 43600 UKM, Bangi, Selangor, Malaysia
  2. Faculty of Electronic and Computer Engineering, Universiti Teknikal Malaysia Melaka, Hang Tuah Jaya, 76100 Durian Tunggal, Melaka, Malaysia

Abstract

This paper reports the effect and optimization of design parameters of a silicon-on-insulator (SOI) optical waveguide phase modulator using Taguchi method. The modulator employing the p-i-n diode structure will be working based on free carrier dispersion effect at 1.55μm optical telecommunication wavelength. The optimization is focus to minimize the tradeoff between refractive index change and absorption loss in the device’s performance. Four design parameters were explored, namely applied voltage, doping concentration, doping position and waveguide rib area. In addition, four noise factors were also included to achieve robustness of the proposed device design which is the annealing temperatures for both the p-doped and n-doped wells as well as the phosphorous and boron implant energy for both the p-doped and n-doped wells. The level of importance of the design parameters on the refractive index change and absorption loss were determined using Analysis of Variance (ANOVA). The optimum process parameter combination was obtained using the analysis of Signal-to-Noise (S/N) ratio. It was discovered that the applied voltage is the most dominant factor in determining the response of the modulator. The results show that the refractive index change and absorption loss upon Taguchi optimization is 0.00155 and 19.9dB/cm respectively..

Keywords

Optimization, Optical phase modulator, Silicon-on-insulator (SOI), Free carrier dispersion effect, Taguchi method.

Citation

B. MARDIANA, P. SUSTHITHA MENON, SAHBUDIN SHAARI, H. HAZURA, A. R. HANIM, N. ARSAD, Robust modeling of SOI-based optical phase modulator using free carrier dispersion effect, Optoelectronics and Advanced Materials - Rapid Communications, 7, 5-6, May-June 2013, pp.346-353 (2013).

Submitted at: Dec. 19, 2012

Accepted at: June 12, 2013