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SHAN DONG1,* , FENG ZHU1, GUANDONG YANG1
InAs crystal wafer showing ferromagnetism have been successfully synthesized by diffusing Mn into InAs under a high-temperature annealing. The concentration of Mn in crystal is 7.8% calculated from X-ray diffraction (XRD) pattern. The sample shows a clear ferromagnetic hysteresis loops at room-temperature, and Curie temperature (TC) may be above 300K. The hole concentration of InAs wafer increases from 2.38×1017 cm-3 to 2.51×1017 cm-3 after Mn is doped into InAs, which may originate from the replacement of In iron by Mn iron. Our first-principle calculations confirm that the ferromagnetic or-dering of p-type InMnAs sample is due to strong p-d exchange interaction and hole-mediated ferromagnetism..
Mn-doped InAs, High Curie temperature, Diffusion, First principles calculations.
SHAN DONG, FENG ZHU, GUANDONG YANG, Room temperature ferromagnetism of Mn doped InAs by a diffusion treatment, Optoelectronics and Advanced Materials - Rapid Communications, 6, 1-2, January-February 2012, pp.174-177 (2012).
Submitted at: June 26, 2011
Accepted at: Feb. 20, 2012
Optoelectronics and Advanced Materials - Rapid Communications
(2023): 0.5 - 2023 Journal Citation Reports (Clarivate Analytics, 2024)
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