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F. ILIE1,* , C. TITA2
In order understand the mechanisms of Chemical Mechanical Planarization (CMP), an Atomic Force Microscope (AFM) is used to characterize polished layer surfaces formed by selective transfer after a set of polishing experiments. The Atomic Force Microscopy (AFM) allows one to examine the effects of applying highly localized stress to a surface. In the presence of solutions tribochemical friction and wear can be investigated. We present results of a study on simultaneous application of chemical agents and mechanical stress involving a model single asperity and a solid surface. We show the consequences of combining highly localized mechanical stress (due to contact with AFM tip) and exposure to aqueous solutions of known pH. The experiment simulates many features of a single particle-substrate- slurry interaction in CMP. To optimize CMP polishing process, one needs to get information on the interaction between the abrasive slurry particles and the surface being polished. To study such interactions, we used all AFM. An AFM tip was used to mimic a single abrasive particle typical of those used in CMP slurry. Surface analysis of selective layer using the AFM revealed detailed surface characteristics of CMP. Studying selective layer in which predominanted copper (in proportion of over 85%) CMP, we found that the AFM scanning removes the surface oxide layer in different rates depending on the depth of removal and the pH of the solution. We show that linear scans and rastered scans display significantly different material removal rates. Oxide removal happens considerably faster than the CMP copper from selective layer removal. This is in agreement with generally accepted models of copper CMP. Quantitative models are presented to explain the observed nanometer-scale surface modifications. Both long-range and the friction forces acting between the AFM tip and surface during the polishing process were measured. The correlation between those forces and removal rate is discussed. In the same time this paper complements recent..
Selective transfer, AFM, CMP, Removal mechanism, Topography, Roughnes, Abrasive slurry particles, Ph, oxid, Polishing surface, Mechanical and tribochemical interactions.
F. ILIE, C. TITA, Selective layer CMP process mimicked with atomic force microscope, Optoelectronics and Advanced Materials - Rapid Communications, 4, 7, July 2010, pp.1008-1012 (2010).
Submitted at: May 31, 2010
Accepted at: July 14, 2010
Optoelectronics and Advanced Materials - Rapid Communications
(2023): 0.5 - 2023 Journal Citation Reports (Clarivate Analytics, 2024)
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