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JIREN YUAN1,2, HONGLIE SHEN1,* , LINFENG LU1, TIANRU WU1, XIANCONG HE1
To obtain higher conversion efficiency for HIT (Heterojunction with Intrinsic Thin film) solar cells, an effective way is to use μc-3C-SiC:H with a wide bandgap as the cell emitter. In this paper, a simulation study is carried out for the HIT solar cells with μc-3C-SiC:H emitter. The performance of solar cells with μc-3C-SiC:H emitter is compared with that of solar cells with a-Si:H emitter. For a 10 nm-thickness emitter, the cell efficiency can realize an increase of above 1.0% for the use of μc-3C-SiC:H. The main cause for the improvement is the reduction of optical loss in short-wavelength region.
Solar cell, Emitter, μc-3C-SiC:H, a-Si:H.
JIREN YUAN, HONGLIE SHEN, LINFENG LU, TIANRU WU, XIANCONG HE, Simulation of HIT solar cells with μc-3C-SiC:H emitter, Optoelectronics and Advanced Materials - Rapid Communications, 4, 8, August 2010, pp.1211-1214 (2010).
Submitted at: July 14, 2010
Accepted at: Aug. 12, 2010
Optoelectronics and Advanced Materials - Rapid Communications
(2023): 0.5 - 2023 Journal Citation Reports (Clarivate Analytics, 2024)
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