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Simulation study of layer thickness and doping effects on PEA₂PbI₄ based perovskite solar cells

NIDHI SINGH1, ANCHAL SRIVASTAVA1, SUSHEEL KUMAR SINGH2, K. C. DUBEY3, SHOBHIT SHUKLA4, R. K. SHUKLA1,*

Affiliation

  1. Department of Physics, University of Lucknow, Lucknow 226007, India
  2. Department of Physics, Dr. S.M.N.R. University, Lucknow 226017, India
  3. Department of Physics, Shia P.G. College, Lucknow 226020, India
  4. Department of Information Technology, Dr. S.M.N.R. University, Lucknow 226017, India

Abstract

Perovskite materials are emerging as leading candidates for photovoltaic applications due to their remarkable optoelectronic properties and structural tunability. This study presents a numerical simulation of a 2D perovskite solar cell using PEA₂PbI₄ as the absorber, modeled with SCAPS-1D. The architecture FTO/ZnO:NR/PEA₂PbI₄/Spiro-OMeTAD/Au was optimized by adjusting absorber thickness (750 nm), ETL/HTL thicknesses (50 nm), doping levels, defect density (10¹⁵ cm⁻³), and resistances. The optimized device achieved a peak PCE of 26.38% with excellent quantum efficiency and stability. These results highlight the importance of precise parameter tuning in enhancing 2D perovskite solar cell performance for scalable applications.

Keywords

Perovskite, Solar Cell, PEA2PbI4, ZnO:NR, Spiro OMeTAD, PCE.

Citation

NIDHI SINGH, ANCHAL SRIVASTAVA, SUSHEEL KUMAR SINGH, K. C. DUBEY, SHOBHIT SHUKLA, R. K. SHUKLA, Simulation study of layer thickness and doping effects on PEA₂PbI₄ based perovskite solar cells, Optoelectronics and Advanced Materials - Rapid Communications, 20, 1-2, January-February 2026, pp.44-61 (2026).

Submitted at: May 22, 2025

Accepted at: Feb. 2, 2026