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Sintering process and annealing effect on some physical properties of V2O5 thin films

H. A. MOHAMED1,2,*

Affiliation

  1. Physics department, faculty of Science, Sohag University, 82524 Sohag, Egypt
  2. Physics department, Teacher's College, King Saud University, 11491 Riyadh, KSA

Abstract

Thin films of vanadium pentoxide (V2O5) on glass substrates were produced by e-beam evaporation technique. The effect of sintering process and annealing temperature on the morphology and optoelectronic properties of these films were studied. The obtained results from scan electron microscope show that, the grain size of V2O5 films increases with increasing both the temperature of sintering and annealing temperature. The as-deposited films show high transmittance in the visible region that decrease with increasing the temperature of annealing. The films that sintered at 500 oC represents the high transmittance value about 85 % in the visible region. The electrical resistivity indicates that, the films that sintered at 400 oC and 600 oC transform from semiconductor to metal at temperature of 250oC..

Keywords

V2O5, Thin films, Electrical resistivity, Sintering.

Citation

H. A. MOHAMED, Sintering process and annealing effect on some physical properties of V2O5 thin films, Optoelectronics and Advanced Materials - Rapid Communications, 3, 7, July 2009, pp.693-699 (2009).

Submitted at: June 30, 2009

Accepted at: July 20, 2009