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SiO2 passivation layer fabricated by inline oxidation for silicon solar cells

SONG ZHANG1, ZHENJIAO WANG2, XI XI3, JINGJIA JI2,4, GUOHUA LI1,4,*

Affiliation

  1. School of Science, Jiangnan University, Wuxi 214122, China
  2. Suntech Power Co. Ltd., Wuxi 214028, China
  3. School of Internet of Things Engineering, Jiangnan University, Wuxi 214122, China
  4. Jiangsu (Suntech) Institute for Photovoltaic Technology, Wuxi 214028, China

Abstract

In this paper, it is demonstrated that the inline oxidation utilizing inline diffusion equipment is an extremely promising alternative to the application of classical quartz tube furnace for thin SiO2 film growth. The results reveal that the thin SiO2 passivation layer fabricated by inline oxidation has a suitable thickness (~10 nm) and provides sufficient passivation, which has a very high thermal stability, and little interference with the antireflection system. Both inline oxidation and tube oxidation show similar results in minority carrier lifetime with and without SiNx layer. Utilizing the inline oxidation process, solar cells with thin SiO2/SiNx stack passivation layer front side and all Al-BSF rear side, obtained an efficiency of 18.3%, while the efficiency was only 17.59% of the cells with single SiNx layer..

Keywords

Silicon solar cells, Inline oxidation, Thin SiO2 film, Passivation.

Citation

SONG ZHANG, ZHENJIAO WANG, XI XI, JINGJIA JI, GUOHUA LI, SiO2 passivation layer fabricated by inline oxidation for silicon solar cells, Optoelectronics and Advanced Materials - Rapid Communications, 5, 12, December 2011, pp.1272-1276 (2011).

Submitted at: Nov. 10, 2011

Accepted at: Nov. 24, 2011