Abstract
The effect of the various oxide aperture sizes on output performance of GaAs MQWs VCSEL is numerically investigated
using ISETCAD simulation program. The influence of the aperture diameter on the output power, threshold current, slope
and differential quantum efficiency is observed. In the study, we found that by increasing the aperture diameter, the
maximum output power, slope efficiency, and differential quantum efficiency was increased due to more lasing modes being
confined inside the active region which lead to increase the number in radiative recombinations inside the active medium.
Keywords
GaAs, VCSEL, Oxide aperture.
Citation
F. Z. JASIM, K. OMAR, Z. HASSAN, Small aperture confined vertical cavity surface emitting laser effects on output performance, Optoelectronics and Advanced Materials - Rapid Communications, 3, 11, November 2009, pp.1247-1249 (2009).
Submitted at: Sept. 28, 2009
Accepted at: Oct. 29, 2009