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XIANG YANG1, YANA GAO1, XIFENG LI1,*
In this paper, coplanar top-gate ZnInSnO-HfAlO (ZITO-HAO) thin film transistors (TFTs) with high performance are successfully fabricated by solution process. The stability of the devices under positive stress and negative stress are investigated. The coplanar top-gate ZITO TFT devices show a high mobility of 32.8 cm2/V•s. All the ZITO TFT devices exhibit an excellent stability. Moreover, devices under the positive and negative stress recover their original characteristics after 500s at room temperature in dark is also demonstrated. Generally, coplanar top-gate structure and the ZITO as the channel layer plays a dominant role in changing the performance of TFT devices..
Coplanar top-gate, ZnInSnO, Solution-processed.
XIANG YANG, YANA GAO, XIFENG LI, Solution processed coplanar top gate ZnInSnO thin film transistors and bias stability, Optoelectronics and Advanced Materials - Rapid Communications, 13, 5-6, May-June 2019, pp.343-347 (2019).
Submitted at: March 23, 2018
Accepted at: June 14, 2019
Optoelectronics and Advanced Materials - Rapid Communications
(2023): 0.5 - 2023 Journal Citation Reports (Clarivate Analytics, 2024)
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