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H. A. MOHAMED1,2,*
In this paper, ZnO films were prepared by oxidizing the Zn film deposited by electron beam evaporation on glass substrates. The oxidation process was carried out at three-step of annealing process. At first step, the Zn films were annealed at temperature of 300 0C for one hour to form ZnO layers on the surface of the Zn films to prevent the diffusion of the metallic Zn from the films during the high-temperature. At second step, the produced films from the first step were annealed at high temperature of 500 oC for one hour. Finally, the time of oxidation increased from 60 min to 220 min in order to achieve fully oxidized films. The effect of oxidation time on structure, optical and electrical properties of ZnO films were studied. It was found that the films annealed at 300 oC are opaque and the films annealed at 500 oC and time 200 min have maximum transmittance of 89% at λ= 600 nm and their corresponding direct optical energy gap are 3.34 eV. The films that heated at low oxidation time represent low relatively resistivity and with increasing the oxidation time these films became more resistive..
Zinc oxide, Thermal oxidation, Optical and electrical properties, X-ray diffraction.
H. A. MOHAMED, Some physical properties of ZnO thin films prepared by thermal oxidation of metallic Zn, Optoelectronics and Advanced Materials - Rapid Communications, 6, 3-4, March-April 2012, pp.389-393 (2012).
Submitted at: Feb. 10, 2012
Accepted at: April 11, 2012
Optoelectronics and Advanced Materials - Rapid Communications
(2023): 0.5 - 2023 Journal Citation Reports (Clarivate Analytics, 2024)
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