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Spin-valve structures with anisotropic magneto-resistance (AMR) for planar Hall effect (PHE) sensing applications

J. NEAMTU1,* , M. VOLMER2, M. C. NEAMTU3

Affiliation

  1. National Institute for Research& Development in Electrical Engineering, 313 Splaiul Unirii Bucharest, 030138, Romania
  2. Physics Department, Transilvania University Brasov, 29 Bd. Eroilor Brasov, 500036, Romania
  3. University of Medicine& Pharmacy Craiova, 2 Petru Rares, 200349, Romania

Abstract

We investigate the magneto-transport properties, the anisotropic magneto-resistance (AMR) and planar Hall effect (PHE) of the spin valve (SV) structures of Ta(3)/FeMn(10)/FMP(tP)/Cu(2)/FMF(tF)/Ta(3)(nm) with the ferromagnetic pinned (FMP) layer with thickness tP =5, 7, 10 nm and the ferromagnetic (FMF) free layer of Permalloy of thickness tF =6, 10 nm deposited by Magnetron Sputtering. The exchange biasing induced from the interface between the pinned layer and antiferromagnetic FeMn layer can enhance the coupling strength between pinned Co layer and free Permalloy (Py) layer, and hence, the field sensitivity of the PHE is increased, even in the absence of external biasing field..

Keywords

Anisotropic Magneto-resistance, Multilayer, Planar Hall Effect, Spin Valve.

Citation

J. NEAMTU, M. VOLMER, M. C. NEAMTU, Spin-valve structures with anisotropic magneto-resistance (AMR) for planar Hall effect (PHE) sensing applications, Optoelectronics and Advanced Materials - Rapid Communications, 12, 9-10, September-October 2018, pp.603-607 (2018).

Submitted at: Jan. 15, 2018

Accepted at: Oct. 10, 2018