"

Cookies ussage consent

I agree.

Our site saves small pieces of text information (cookies) on your device in order to deliver better content and for statistical purposes. You can disable the usage of cookies by changing the settings of your browser. By browsing our site without changing the browser settings you grant us permission to store that information on your device.

Structural and electronic properties of Bi2-xSbxTe3 ternary and Bi2-xSbxTe3-ySey quaternary compounds

TURGUT FATIH KASALAK1,2,* , ARIF BABANLI3,4, SEYFETTIN ÇAKMAK3, İSMAIL YÜCEL2

Affiliation

  1. Department of Informatics, Akdeniz University, Turkey
  2. Graduate School of Natural and Applied Sciences, Suleyman Demirel University, Turkey
  3. Department of Physics, Faculty of Science, Suleyman Demirel University, Turkey
  4. Institute of Physics, Azerbaijan National Academy of Sciences, 370143 Baku, Azerbaijan

Abstract

Structural and electronic properties of ternary compounds Bi2-xSbxTe3 and quaternary compounds Bi2-xSbxTe3-ySey are investigated by using the density functional theory within full potential-linearized augmented plane wave method. The structural properties of compounds are examined using the Murnaghan equation of state, which also contains experimental data for comparison. Specifically, band structures exhibit very similar behaviour in total density of states of compounds which show narrow-gap semiconductor material characteristics. Bi1.66Sb0.33Te3, Bi1.33Sb0.66Te3, BiSbTe3, Bi0.66Sb1.33Te3 and Bi0.33Sb1.66Te3 are direct band gap materials and the band gap energies of these compounds are found to depend linearly on compound composition x. Bi1.66Sb0.33Te2.66Se0.33, Bi1.33Sb0.66Te2.33Se0.66, BiSbTe2Se, Bi0.66Sb1.33Te1.66Se1.33, Sb2TeSe2, Sb2Te0.66Se2.33 and Sb2Te0.33Se2.66 are direct band gap materials and the band gap energies of these compounds are found to depend non-linearly on compound composition x and y. This theoretical work will be of great interest in ternary and quaternary semiconductor research..

Keywords

Bismuth telluride, Antimony telluride, Antimony triselenide, Structural properties, Electronic properties.

Citation

TURGUT FATIH KASALAK, ARIF BABANLI, SEYFETTIN ÇAKMAK, İSMAIL YÜCEL, Structural and electronic properties of Bi2-xSbxTe3 ternary and Bi2-xSbxTe3-ySey quaternary compounds, Optoelectronics and Advanced Materials - Rapid Communications, 10, 5-6, May-June 2016, pp.391-396 (2016).

Submitted at: March 17, 2016

Accepted at: June 9, 2016