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M. CHANDRAMOHAN1, T. VENKATACHALAM1,*
High quality thin films of CuInxGa1-xSe2 were deposited on well cleaned glass substrates by chemical bath deposition technique. The composition, structural and optical properties of two representative films (bath temperatures 300 and 323 K) were carried out by using EDAX technique, X-ray diffractogram and spectrophotometer respectively. From the EDAX results, the Stoichiometric formulae of the films 1 and 2 were identified as CuIn0.74Ga0. 26Se2 and CuIn0.76Ga0.24Se2. The XRD results reveal that the films are chalcopyrite type structure with the lattice parameters 5.725 Å (a) and 11.462 Å (c). The optical transmission spectra for the films were recorded from the spectrophotometer. The transmission data was used to determine the energy band gap values which were calculated to be 1.23 and 1.15 eV..
Chemical bath deposition, Thin films, CIGS, Solar cells, Band gap, Semiconductor.
M. CHANDRAMOHAN, T. VENKATACHALAM, Structural and optical properties of CuIn0.74Ga0.26Se2 and CuIn0.76Ga0.24Se2 thin films, Optoelectronics and Advanced Materials - Rapid Communications, 4, 1, January 2010, pp.70-72 (2010).
Submitted at: Dec. 15, 2009
Accepted at: Jan. 19, 2010
Optoelectronics and Advanced Materials - Rapid Communications
(2023): 0.5 - 2023 Journal Citation Reports (Clarivate Analytics, 2024)
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