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Structural, electrical and photovoltaic characteristics of n- ZnSe/p-Ge heterojunctions

M. FADEL1, A. A. M. FARAG2,*

Affiliation

  1. Semiconductor Laboratory, Physics department, Faculty of Education, Ain Shams University, Cairo, Egypt
  2. Thin Film Laboratory, Physics department, Faculty of Education, Ain Shams University, Cairo, Egypt

Abstract

A high quality n-ZnSe/p-Ge heterojunction is produced by Metal organic chemical vapor deposition (MOCVD) technique. The devices structure were investigated by X-ray diffraction and scanning electron microscopy. The devices have good reproducibility of their electrical characteristics and high rectification ratio. The electrical and photovoltaic properties of n- ZnSe/p-Ge heterojunction were investigated by measuring current density-voltage (J-V) and capacitance-voltage (C-V) characteristics at various temperatures and under light illumination of 80 mW/cm2. The analysis of dark current -voltage characteristics in the temperature range 300-400 K were presented in order to elucidate the conduction mechanisms and to evaluate the device parameters. The charge transport conduction mechanism in the forward biased condition in the low voltage region is described by the modified Schockley effect. For high biases , V≥ 0.6 V , the dark current is a space charge limited current (SCLC) controlled by a single dominant trap level. The capacitance of the device was measured as a function of applied voltage at a frequency of 1MHz, at temperatures ranging from 300 to 400 K, indicating the formation of p-n junction between ZnSe and Ge and the built-in potential was found to decrease with the increase in temperature. The photovoltaic characteristics of the device based on an efficient donor/acceptor combination of n-ZnSe/p-Ge heterojunctions were also studied..

Keywords

ZnSe/Ge, Heterojunctions, MOCVD, Photovoltaic.

Citation

M. FADEL, A. A. M. FARAG, Structural, electrical and photovoltaic characteristics of n- ZnSe/p-Ge heterojunctions, Optoelectronics and Advanced Materials - Rapid Communications, 5, 8, August 2011, pp.830-835 (2011).

Submitted at: May 3, 2011

Accepted at: Aug. 10, 2011