"

Cookies ussage consent

Our site saves small pieces of text information (cookies) on your device in order to deliver better content and for statistical purposes. You can disable the usage of cookies by changing the settings of your browser. By browsing our site without changing the browser settings you grant us permission to store that information on your device.

Structural, optical and electrical characterization of hot wall grown 2-aminoanthracene films

SUKHWINDER SINGH BRAR1, A. MAHAJAN1,* , R. K. BEDI1

Affiliation

  1. Material Science Research Laboratory, Department of Physics, Guru Nanak Dev University, Amritsar-143005, India

Abstract

Highly crystalline thin layers of 2-aminoanthracene compound have been grown onto the glass substrate near thermodynamic equilibrium using hot wall technique. These films have been studied for their structural, optical and electrical properties. X-ray diffraction and atomic force microscopy investigations on these films indicate their crystalline nature. The crystallinity of these films found to increase with increase in substrate temperature, whereas lattice strain decreases. Analysis of the optical absorption measurements indicate that interband transition energies lies in the range of 3.88-3.92 eV. Photoluminescence measurements on these films show prominent green emission peak around 2.4 eV. Room temperature conductivity of these films lies in the range of 1.17 × 10-6 - 1.22 × 10-6 Ω-1cm-1..

Keywords

Thin films, Organic semiconductor, Electrical properties, Structural and optical properties.

Citation

SUKHWINDER SINGH BRAR, A. MAHAJAN, R. K. BEDI, Structural, optical and electrical characterization of hot wall grown 2-aminoanthracene films, Optoelectronics and Advanced Materials - Rapid Communications, 5, 8, August 2011, pp.815-820 (2011).

Submitted at: May 2, 2011

Accepted at: Aug. 10, 2011