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MARWA ABDUL MUHSIEN HASSAN1,*
CdSe, belongs to group II-VI semiconductors, is found to be promising material for its applications in the area of electronics and opto-electronics. The structural properties of CdSe thin films have been investigated. CdSe thin films have been deposited on suitably cleaned glass substrates by thermal evaporation method for different thickness 150 nm, 200 nm, 250 nm and 300 nm. Polycrystalline nature of the material was confirmed by X-ray diffraction technique and various structural parameters were calculated. All the films show most preferred orientation along (0 0 2) plane. The grain size of deposited CdSe films is small and is within the range of 26 to 40 nm..
CdSe, Structure properties, Grain size, Thermal evaporation, Thin films.
MARWA ABDUL MUHSIEN HASSAN, Structural properties for cadmium selenide thin films deposited by thermal evaporation technique, Optoelectronics and Advanced Materials - Rapid Communications, 5, 6, June 2011, pp.634-638 (2011).
Submitted at: March 9, 2011
Accepted at: June 9, 2011
Optoelectronics and Advanced Materials - Rapid Communications
(2023): 0.5 - 2023 Journal Citation Reports (Clarivate Analytics, 2024)
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