Our site saves small pieces of text information (cookies) on your device in order to deliver better content and for statistical purposes. You can disable the usage of cookies by changing the settings of your browser. By browsing our site without changing the browser settings you grant us permission to store that information on your device.
M. Z. M. YUSOFF1,* , Z. HASSAN1, H. ABU HASSAN1
The high Ga-content AlGaN thin films are grown on GaN/AlN/silicon (111) substrate by plasma assisted molecular beam epitaxy (PA-MBE). The full width at half-maximum (FWHM) of the AlxGa1-xN alloys deposited on silicon as determined by XRD symmetric RC ω/2θ scans of (0002) plane at room temperature is 0.520. The Al mole-fraction of this sample as deduced from Vegrad’s law and HR-XRD measurement is 0.29. Photoluminescence (PL) spectrums of sample have shown sharp and intense band edge emission of GaN without the existence of yellow emission band, showing good crystal quality of the samples have been successfully grown on Si substrate.
AlGaN/Si, AlGaN/GaN, III-Nitride.
M. Z. M. YUSOFF, Z. HASSAN, H. ABU HASSAN, Structural properties of high Ga-content AlxGa1-xN on Si substrate studied by high resolution X-ray diffraction and photoluminescence, Optoelectronics and Advanced Materials - Rapid Communications, 4, 5, May 2010, pp.644-646 (2010).
Submitted at: March 31, 2010
Accepted at: May 20, 2010
Optoelectronics and Advanced Materials - Rapid Communications
(2023): 0.5 - 2023 Journal Citation Reports (Clarivate Analytics, 2024)
Active accounts were imported to the new platform and assigned a random password by default. In order to access your account you need to access the login page and go through the Lost Password dialog (involves the system sending you an email with instructions) in order to reset your password. This step is necessary as passwords are kept in hashed form and the new platform uses modern hashing algorithms incompatible with the previous ones.