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S. KUMAR1, D. SINGH1, R. THANGARAJ1,*
Photodoping of Ag in Ge22Sb22Te56 films has been done by illuminating the thermally evaporated Ag:Ge-Sb-Te bilayer (~40 nm:250 nm) with 500 W halogen lamp. Disappearance of Ag (111) peak in x-ray scan from the bilayer after 20 min. illumination at room temperature confirms the photodoping of Ag in the chalcogenide film. The effects of Ag-photodoping on the optical properties of the Ge22Sb22Te56 film have been examined by transmission and reflection data. The structural phases have been evaluated by x-ray diffraction patterns of thermally annealed films and sheet resistance variation with temperature measurements. It is found that amorphous to crystalline transformation temperature increases and optical gap decreases in Ag-photodoped films. The x-ray diffraction (XRD) has been studied for the films annealed at two different temperatures. Peaks of FCC phases appear in Ge22Sb22Te56 film annealed at 160 oC but Ag-photodoped Ge22Sb22Te56 film remains amorphous. The peaks of Ag5Te3 phases are identified for Ag-photodoped Ge22Sb22Te56 film annealed at 250 oC..
Ge-SbTe, Thin films, Silver photodoping.
S. KUMAR, D. SINGH, R. THANGARAJ, Structural transformations of silver photodoped Ge-Sb-Te thin films, Optoelectronics and Advanced Materials - Rapid Communications, 5, 9, September 2011, pp.920-923 (2011).
Submitted at: Aug. 17, 2011
Accepted at: Sept. 15, 2011
Optoelectronics and Advanced Materials - Rapid Communications
(2023): 0.5 - 2023 Journal Citation Reports (Clarivate Analytics, 2024)
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