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N. GHRAÏRI1, F. AOUSGI1, M. ZRIBI1,* , M. KANZARI1
Structural, optical and electrical properties of as deposited Sb2S3 films grown by simple source thermal evaporation method were studied. The films were annealed at temperature of 300°C in different atmosphere: vacuum, sulphur vapour, air atmosphere and nitrogen. The sulphur antimony was present structural, morphology, electrical and optical properties. Polycrystalline antimony trisulfide films are obtained by annealing at 300°C in various atmospheres. The values of some important parameters of the films as e.g. absorption coefficient and optical band gap energy are determined from transmission spectra. Polycrystalline antimony trisulfide films have strong absorption coefficients in the range 104 -105 cm−1 and the direct optical band gap was found to be 1.64-1.71 eV. The thermal activation energy of the films is determined by the temperature dependence of electrical conductivity.
Antimony trisulfide, Thin films, Structural properties, Morphological properties, Electrical properties.
N. GHRAÏRI, F. AOUSGI, M. ZRIBI, M. KANZARI, Studies of the properties of thermally annealed Sb2S3 thin films, Optoelectronics and Advanced Materials - Rapid Communications, 3, 8, August 2009, pp.757-762 (2009).
Submitted at: May 15, 2009
Accepted at: July 31, 2009
Optoelectronics and Advanced Materials - Rapid Communications
(2023): 0.5 - 2023 Journal Citation Reports (Clarivate Analytics, 2024)
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