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W. BAO1,* , F. Y. QIU1, S. BAI2, Y. LI1, D. M. CHEN1
Electrical transport properties of heterojunction solar cells are greatly influenced by the band offsets at the heterointerface. In this research, the band offsets of ZnS/Cu2ZnIVS4(IV=Si,Ge,Sn) heterointerfaces were studied by first-principles calculation method and their heterojunction solar cells were simulated by AMPS simulator. Band offset of ZnS/Cu2ZnSiS4 was observed to be type II heterointerface, with a cliff-like conduction band offset. ZnS/Cu2ZnGeS4 and ZnS/Cu2ZnSnS4 were demonstrated to be type I heterointerface with the large conduction band spike (0.7eV and 1.4eV, respectively), caused very little short circuit current densities..
Cu2ZnIVS4(IV=Si,Ge,Sn), Heterointerface, Band offset, Solar cell.
W. BAO, F. Y. QIU, S. BAI, Y. LI, D. M. CHEN, Study of band offset at ZnS/Cu2ZnIVS4(IV=Si,Ge,Sn) heterointerfaces, Optoelectronics and Advanced Materials - Rapid Communications, 12, 5-6, May-June 2018, pp.327-331 (2018).
Submitted at: June 21, 2017
Accepted at: June 7, 2018
Optoelectronics and Advanced Materials - Rapid Communications
(2023): 0.5 - 2023 Journal Citation Reports (Clarivate Analytics, 2024)
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