Our site saves small pieces of text information (cookies) on your device in order to deliver better content and for statistical purposes. You can disable the usage of cookies by changing the settings of your browser. By browsing our site without changing the browser settings you grant us permission to store that information on your device.
W. J. AZIZ1,* , K. IBRAHIM1
In this study, the performance of the (In0.04Ga0.96N/SiC) solar cells was theoretically designed and investigated. The design and performance evaluated by developing simulation models that are included in our simulator (ISE TCD). The limitation of the current versus voltage and efficiency values will be discuss and analyze. The calculation of current and voltage has been done under AM 1.5 with doping concentration levels 5x1018cm-3 of n-type and 2x1018 cm-3 for p-type. The effects of some parameters likes Voc, Isc, fill factor, efficiency were carried out and investigated in this study. Our results indicate that the (In0.04Ga0.96N/SiC) alloy have interesting performance for tandem cells application, practically, there is a very little range of materials that could be used to make these cells..
Mole fraction, SiC, III-V, High efficiency, Solar cells.
W. J. AZIZ, K. IBRAHIM, Study of design the (In0.04Ga0.96N/SiC) solar cells, Optoelectronics and Advanced Materials - Rapid Communications, 5, 1, January 2011, pp.12-15 (2011).
Submitted at: Dec. 24, 2008
Accepted at: Jan. 26, 2011
Optoelectronics and Advanced Materials - Rapid Communications
(2023): 0.5 - 2023 Journal Citation Reports (Clarivate Analytics, 2024)
Active accounts were imported to the new platform and assigned a random password by default. In order to access your account you need to access the login page and go through the Lost Password dialog (involves the system sending you an email with instructions) in order to reset your password. This step is necessary as passwords are kept in hashed form and the new platform uses modern hashing algorithms incompatible with the previous ones.