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R. V. GHITA1,* , C. COTIRLAN1, F. UNGUREANU1, C. FLORICA1, C. C. NEGRILA1
A genuine GaAs surface is covered with a relatively thick layer (~nm) of native oxide pinning the Surface Fermi level within the band gap of semiconductor. The method presented in this work is related to sulfur passivation by treating n-GaAs in different solutions of alkane thiols. At the surface of GaAs it is developed an adherent layer of sulfur compound as a result of chemical interaction of sulfur ions with GaAs(100) face, that are putted in evidence by scanning electron microscopy (SEM) images and second harmonic generation (SHG) analysis. Using X-ray photoelectron spectroscopy (XPS) is presented a detailed analysis of XPS data at the surface of thiols on GaAs together with the presence of the covalent bond As-S. The electric characteristics of the AuGeNi/Thiol/GaAs structure are presented in I (V) curves recorded in the region of small currents..
XPS analysis, Alkane thiols chemical passivation, SHG analysis, I-V curves, GaAs substrates.
R. V. GHITA, C. COTIRLAN, F. UNGUREANU, C. FLORICA, C. C. NEGRILA, Study of thiols deposition on GaAs, Optoelectronics and Advanced Materials - Rapid Communications, 6, 1-2, January-February 2012, pp.239-244 (2012).
Submitted at: Nov. 14, 2011
Accepted at: Feb. 20, 2012
Optoelectronics and Advanced Materials - Rapid Communications
(2023): 0.5 - 2023 Journal Citation Reports (Clarivate Analytics, 2024)
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