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M. RAMYA1,* , S. GANESAN2
Cu2S being an II-VI compound has attracted much attention in opto-electronic device applications. Cu2S were synthesized by vacuum evaporation under a pressure of 10-6 torr at an evaporation rate of 3Å /sec. Rotary drive is employed to obtain uniformity in film thickness. Thicknesses of the film were measured by using quartz crystal monitor. Resistivity of Cu2S thin films were measured by four probe method. The electrical properties of Al- Cu2S -Al (MSM) structures were studied using current-voltage characteristics. The conductivity was found to exhibit two distinct mechanisms within the applied fields. The possible conduction mechanism prevailing in Cu2S thin films were also discussed. High thickness Cu2S thin film exhibit high conductivity whereas conductivity decreases towards the lower thickness. Band gap has been calculated for different thicknesses and is found that band gap decreases with increase in film thickness..
II-VI compounds, Cu2S thin films, Vacuum evaporation, Poole-Frenkel effect.
M. RAMYA, S. GANESAN, Study on current conduction mechanism in evaporated Cu2S thin films, Optoelectronics and Advanced Materials - Rapid Communications, 5, 9, September 2011, pp.936-942 (2011).
Submitted at: Sept. 16, 2011
Accepted at: Sept. 15, 2011
Optoelectronics and Advanced Materials - Rapid Communications
(2023): 0.5 - 2023 Journal Citation Reports (Clarivate Analytics, 2024)
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