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Studying the influence of material parameters on quantum efficiency of In0.53Ga0.47As photovoltaic detector

YINGTIAN XU1, YING LI2, BEIHONG LONG3, YAN MA1, GUOTONG DU1, JINGZHI YIN1,*

Affiliation

  1. State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun, 130012, People’s Republic of China
  2. Changchun Automobile Industry institute, 9999 Dongfeng street, Changchun, 130011, People’s Republic of China
  3. College of Materials Science and Engineering, Jinlin University, 2699 Qianjin Street, Changchun, 130012, People’s Republic of China

Abstract

In this paper, the dependence of quantum efficiency on the direction of incident light, carrier concentrations, surface recombination velocities and material thicknesses for In0.53Ga0.47As photovoltaic detector has been analyzed. When light injected from p-side, the p-region surface recombination velocity, its carrier concentration and thickness have significant impact to the quantum efficiency. The n-region material parameters have slight impact on quantum efficiency. The surface recombination velocity and its thickness influence is primarily for low carrier concentration (n<1017cm-3). When light injected from n-side, the n-region surface recombination velocity affects quantum efficiency when n<1017cm-3; the influence of thickness on quantum efficiency is primarily when n>1016cm-3..

Keywords

In0.53Ga0.47As PV detector, Material parameters, Quantum efficiency.

Citation

YINGTIAN XU, YING LI, BEIHONG LONG, YAN MA, GUOTONG DU, JINGZHI YIN, Studying the influence of material parameters on quantum efficiency of In0.53Ga0.47As photovoltaic detector, Optoelectronics and Advanced Materials - Rapid Communications, 6, 11-12, November-December 2012, pp.1009-1014 (2012).

Submitted at: June 12, 2012

Accepted at: Oct. 30, 2012