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B. N. JOSHI1, Y. S. MHAISAGAR1, A. M. MAHAJAN1,*
Surface modification of porous SiO2 thin film deposited by sol-gel technique has been examined in detail. The surface modification of porous films using hexamethyldisilazine (HMDS) has been carried out successfully to remove silanol (Si-OH) groups and thereby achieved a lower dielectric constant (k) of the deposited thin films. Surface profile, thickness and refractive index of low-k thin films have been analyzed through Ellipsometer. The deposited films are observed to be having low-k and good uniformity before and after modification. The chemical bondings of porous SiO2 films have been realized by using Fourier transform infrared spectroscopy (FTIR). The increase of carbon peak in film with increase in HMDS proportion reveals that, the most of the hydroxyl (–OH) groups get converted to methyl groups which makes hydrophobic surface of the film..
Low- k, HMDS, Surface modification.
B. N. JOSHI, Y. S. MHAISAGAR, A. M. MAHAJAN, Surface modification of porous SiO2 thin film by chemical treatment, Optoelectronics and Advanced Materials - Rapid Communications, 4, 9, September 2010, pp.1304-1306 (2010).
Submitted at: July 30, 2010
Accepted at: Sept. 15, 2010
Optoelectronics and Advanced Materials - Rapid Communications
(2023): 0.5 - 2023 Journal Citation Reports (Clarivate Analytics, 2024)
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