"

Cookies ussage consent

I agree.

Our site saves small pieces of text information (cookies) on your device in order to deliver better content and for statistical purposes. You can disable the usage of cookies by changing the settings of your browser. By browsing our site without changing the browser settings you grant us permission to store that information on your device.

Surface roughness of low-temperature polycrystalline silicon prepared by excimer laser crystallization

CHIL-CHYUAN KUO1,*

Affiliation

  1. Department of Mechanical Engineering, Ming Chi University of Technology No. 84, Gungjuan Road, Taishan Taipei Hsien 243, Taiwan

Abstract

Surface roughness of polycrystalline silicon (poly-Si) films fabricated by both frontside excimer laser crystallization (ELC) and backside ELC are investigated by atomic force microscope. The results show that surface roughness of poly-Si films achieved by backside ELC is lower than that by frontside ELC in three distinct regrowth regimes. The root mean square surface roughness of poly-Si films for frontside ELC and backside ELC in the super lateral growth regime is 21.192 nm and 16.263 nm, respectively. Backside ELC seems to be a good candidate for batch production of low-temperature polycrystalline silicon thin-film transistors under the conditions including same maximum grain size of poly-Si films for both frontside ELC and backside ELC, higher laser efficiency, and lower surface roughness of poly-Si films..

Keywords

Surface roughness, Low-temperature polycrystalline silicon, Excimer laser crystallization.

Citation

CHIL-CHYUAN KUO, Surface roughness of low-temperature polycrystalline silicon prepared by excimer laser crystallization, Optoelectronics and Advanced Materials - Rapid Communications, 3, 11, November 2009, pp.1168-1173 (2009).

Submitted at: Sept. 28, 2009

Accepted at: Oct. 29, 2009