OAM-RC

Abstract

Tin Selenide thin films w ere synthesized by spin coatin g and c o reduction from raw materials of SnCl 2 · 2H 2 O and SeO 22. The phase and morphology of the film products were investigated by X-ray diffraction (XRD), scanning electron microscope (SEM) and atomic force microscope (AFM) respectively. XRD results show that, the obtained SnSe2 thin film shows preferred growth trend along Z axis with c r ystal planes of (001), (002), (003) and (004); The crystallinity of film samples prepared at 160 oC, 170 oC and 180 oC increase s with temperature rising. R elative pure SnSe2 phase with good crystallinity can be obtained in the film sample prepared at 180 o C while impurity phase SnSe appeared in the sampl es obtained at 200 °C. SEM and AFM results show that, the sample obtained by reacting twice at 180 °C for 10 h shows relatively dense and continuous film with rough surface and consists of most particles with diameters of about 0.1~0.5 μm and a few larger particles. There are s ome few particles and many vertical nanoflakes or micropores in the film sample s obtained at 200 °C..

Keywords

Chemical synthesis, Semiconductors, Thin film, SnSe2.

Citation

KEGAO LIU, NIANJING JI, YONG XU, JIYANG WANG, Synthesis and characterization of Tin Selenide thin films, Optoelectronics and Advanced Materials - Rapid Communications, 8, 11-12, November-December 2014, pp.1081-1084 (2014).

Submitted at: Aug. 13, 2014

Accepted at: Nov. 13, 2014