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Synthesis and l uminescent properties of novel red emitting p hosphor InNbO4 :Eu3+ for white light emitting diodes

AN TANG1,* , DINGFEI ZHANG2, LIU YANG3, HONG SONG ZHANG1, HAOMING ZHANG1, FENGXIANG SHAO1, BO REN1

Affiliation

  1. Department of Mechanical Engineering, Henan Institute of Engineering, Zhengzhou, Henan 451191, China
  2. College of Materials Science and Engineering, Chongqing University, Chongqing 400045, China
  3. Chongqing Academy of Science & Technology, Chongqing 401123, China

Abstract

Red emitting phosphor InNbO 4 :Eu 3+ w as synthesized by solid state reaction. The crystal structure, particle size distribution, and luminescence properties were respectively analyzed. The XRD pattern shows that pure InNbO 4 :Eu 3+ was obtained. The spectra reveal that the phosphor can be effecti vely excited under excitation with 394 nm and 466 nm to emit strong red light at 612 nm due to the 5 D 0 7 F 2 transition of Eu 3+3+. The perfect Eu 3+ doped co ncentration is 4 mol%. The chromaticity coordinates of the InNbO 4 :0.04Eu 3+ are closer to the National Television Standard Committee ( NTSC standard values. Thus the InNbO 4 :Eu 3+ is a promising red emitting p hosphor for white light emitting diodes..

Keywords

Solid state reaction, Phosphor , InNbO4, Light emitting diodes.

Citation

AN TANG, DINGFEI ZHANG, LIU YANG, HONG SONG ZHANG, HAOMING ZHANG, FENGXIANG SHAO, BO REN, Synthesis and l uminescent properties of novel red emitting p hosphor InNbO4 :Eu3+ for white light emitting diodes, Optoelectronics and Advanced Materials - Rapid Communications, 8, 1-2, January-February 2014, pp.15-17 (2014).

Submitted at: Sept. 5, 2013

Accepted at: Jan. 22, 2014