Abstract
ZnTe thin films were prepared using Stacked Elemental Layer (SEL) method. The presence of Cubic and Hexagonal
phases of ZnTe was confirmed by XRD technique. Cubic ZnTe phase with (111) orientation and hexagonal to cubic phase
conversion was observed at 425°C. Decreased dislocation density (δ ), micro strain (ε), internal stress (σ) and crystalline
size (D) were observed. The observed texture coefficient (TC) value suggested that the growth of ZnTe is in (220) and (311)
orientations rather than (111) orientation. The observed results were supporting the growth of ZnTe thin film using SEL
method in efficient manner.
Keywords
Physical vapor deposition processes, Thin film, Stacked elemental layer method, Structural phase analysis.
Citation
S. SHANMUGAN, S. BALAJI, K. RAMANATHAN, Synthesis of ZnTe thin film using stacked elemental layer method: structural studies, Optoelectronics and Advanced Materials - Rapid Communications, 3, 5, May 2009, pp.468-471 (2009).
Submitted at: May 11, 2009
Accepted at: May 25, 2009