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R. KAPLAN1,* , B. KAPLAN1
Characterization of amorphous (a-) Si:H p-i-n thin film solar cells with different transparent-conductive-oxide (TCO) sheet resistance is described with focus on the spectral photoresponse measurements. Current density-voltage (J-V) characteristics under dark and light, fill factor, temperature-dependent current density and solar cell diode quality factor, bias-dependent integrated quantum efficiency (IQE) are investigated. Solar cell diode quality factor decreases with increasing temperatures for all devices with different TCO sheet resistances. There exists commonly a voltage-dependent photocurrent density collection which affects J-V characteristcs and IQE measurements. The voltage and light bias dependence of these measurements can be used to diagnose some specific losses. It is found that at reverse bias, the IQE is almost independent of bias light and applied voltages. However it strongly depends on both parameters for forward biases. There is no a big TCO sheet resistance effect on the solar cell performance at all temperatures mesured (220-400 K). The results are interpreted in the light of standard device models..
a-Si:H p-i-n solar cell, Transparent-conductive-oxide (TCO) sheet resistance, Temperature- and spectral-dependent photocurrent, Integrated quantum efficiency.
R. KAPLAN, B. KAPLAN, Temperature and spectral dependent analysis of photocurrent in a-Si:H single junction p-i-n solar cells, Optoelectronics and Advanced Materials - Rapid Communications, 12, 3-4, March-April 2018, pp.171-177 (2018).
Submitted at: March 1, 2016
Accepted at: April 5, 2018
Optoelectronics and Advanced Materials - Rapid Communications
(2023): 0.5 - 2023 Journal Citation Reports (Clarivate Analytics, 2024)
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