Our site saves small pieces of text information (cookies) on your device in order to deliver better content and for statistical purposes. You can disable the usage of cookies by changing the settings of your browser. By browsing our site without changing the browser settings you grant us permission to store that information on your device.
V. BALASUBRAMANIAN1,* , N. SURIYANARAYANAN2, S. PRABAHAR1, S. SRIKANTH1, P. RAVI1
Copper bismuth sulphide thin films have been prepared onto well cleaned glass substrates by chemical deposition method using copper nitrate, bismuth nitrate, sodium thiosulphate and EDTA as complexing agent. Studies of Hall effect show that the carrier concentration (n) decreases while Hall mobility (μ) increases with the increase of bath temperature and deposition time period..
Copper Bismuth sulphide, Chemical bath deposition, Carrier concentration, Mobility, Hall coefficient.
V. BALASUBRAMANIAN, N. SURIYANARAYANAN, S. PRABAHAR, S. SRIKANTH, P. RAVI, Temperature and time dependent Hall effect studies on chemically deposited CuBiS2 thin films, Optoelectronics and Advanced Materials - Rapid Communications, 6, 1-2, January-February 2012, pp.104-106 (2012).
Submitted at: Dec. 2, 2011
Accepted at: Feb. 20, 2012
Optoelectronics and Advanced Materials - Rapid Communications
(2023): 0.5 - 2023 Journal Citation Reports (Clarivate Analytics, 2024)
Active accounts were imported to the new platform and assigned a random password by default. In order to access your account you need to access the login page and go through the Lost Password dialog (involves the system sending you an email with instructions) in order to reset your password. This step is necessary as passwords are kept in hashed form and the new platform uses modern hashing algorithms incompatible with the previous ones.