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M. GÖKÇEN1,* , H. ALTUNTAŞ1, Ş. ALTINDAL1
Temperature dependence of capacitance-voltage (C-V) and conductance-voltage (G/w-V) characteristics of the Au/SiO2/nGaAs (MOS) structures were investigated by considering the both the interface states (Nss) and series resistance (Rs) effect. Both the values of capacitance and conductance generally increase with increasing temperature. These increase in C and G/w especially at high temperatures results from the existence of interface states at SiO2/n-GaAs interface. It is found that in the existence of Rs, the forward bias C-V curves exhibit an anamolous peak, and this peak positions shift toward from accumulation region to inversion region with increasing temperature. Also the magnitude of peak increases with increasing temperature. The values of Rs and Nss were calculated by using Nicollian and Goetzberger and Hill-Coleman methods, respectively. The experimental C-V and G/w-V characteristics confirm that the Rs and Nss of the MOS structure are important parameters that strongly influence the electrical characteristics of the Au/SiO2/n-GaAs structures especially at high temperatures.
Au/SiO2/n – GaAs, MOS structure, Capacitance-voltage characteristics.
M. GÖKÇEN, H. ALTUNTAŞ, Ş. ALTINDAL, Temperature dependence of electrical characteristics of Au/SiO2/n-GaAS (MOS) structures, Optoelectronics and Advanced Materials - Rapid Communications, 2, 12, December 2008, pp.838-841 (2008).
Submitted at: Nov. 3, 2008
Accepted at: Dec. 4, 2008
Optoelectronics and Advanced Materials - Rapid Communications
(2023): 0.5 - 2023 Journal Citation Reports (Clarivate Analytics, 2024)
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