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Temperature dependent current-voltage (I-V) characteristics of Au/n-Si (111) Schottky barrier diodes (SBDs) with polyvinyl alcohol (Co, Ni -Doped) interfacial layer

T. TUNÇ1,* , İ. DÖKME2, Ş. ALTINDAL3, İ USLU4

Affiliation

  1. Science Education Department, Faculty of Education, Aksaray University, Aksaray, Turkey
  2. Science Education Department, Faculty of Gazi Education, Gazi University, Ankara, Turkey
  3. Physics Department, Faculty of Arts and Sciences, Gazi University, Ankara, Turkey
  4. ChemistryEducation Department, Faculty of Education, Selçuk University, Konya, Turkey

Abstract

Current-voltage (I-V) characteristics of Au/PVA(Co,Ni-doped)/n-Si (111) SBDs have been investigated in the temperature range of 280-400 K. The zero-bias barrier height (ΦB0) and ideality factor (n) determined from the forward bias I–V characteristics were found strongly depend on temperature. The forward bias semi-logarithmic I-V curves for the different temperatures have an almost common cross-point at a certain bias voltage. While the value of n decreases, the ΦB0 increases with increasing temperature. Therefore, we attempted to draw a Φbo vs q/2kT plot to obtain evidence of a Gaussian distribution of the barrier heights, and to calculate the values of mean barrier height and standard deviation at zero bias, respectively.

Keywords

I–V characteristics, Ideality factor, Barrier height, Interface states.

Citation

T. TUNÇ, İ. DÖKME, Ş. ALTINDAL, İ USLU, Temperature dependent current-voltage (I-V) characteristics of Au/n-Si (111) Schottky barrier diodes (SBDs) with polyvinyl alcohol (Co, Ni -Doped) interfacial layer, Optoelectronics and Advanced Materials - Rapid Communications, 4, 7, July 2010, pp.947-950 (2010).

Submitted at: June 9, 2010

Accepted at: July 14, 2010