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Temperature dependent resistivity and Hall effect in proton irradiated CdS thin films

L. ION1,* , V. GHENESCU2, S. IFTIMIE1, V. A. ANTOHE1, A. RADU1, M. GUGIU3, G. VELISA3, O. PORUMB1, S. ANTOHE1

Affiliation

  1. Faculty of Physics, University of Bucharest, 405 Atomistilor, P.O. Box MG-11, 077125, Magurele-Ilfov, Romania
  2. Institute of Space Sciences, 409 Atomistilor, P.O. Box MG-23, 077125, Magurele-Ilfov, Romania
  3. Horia Hulubei National Institute of Physics and Nuclear Engineering, 407 Atomistilor, P.O. Box MG-6, 077125, Magurele-Ilfov, Romania

Abstract

Cadmium sulphide finds extensive applications in a variety of optoelectronic devices. In particular, CdS thin films are suitable for use as windows in heterojunction solar cells that employ CdTe, Cu2S or CuInSe2 as an absorber. Such thin film based solar cells are well suited for use in space technology. For that specific application, it is important to know how ionizing radiations change their performances. We have investigated the effects of irradiation with high energy protons (3MeV), at 1014 fluency, on electrical properties of polycrystalline CdS thin layers . The samples were prepared by thermal vacuum deposition from single source onto optical glass substrate. Temperature dependent electrical resistivity and Hall effect, before and after irradiation, were recorded from 300 K down to 4 K. The experimental results can be explained in the frame of a two-band model. Above 100 K electrical properties are controlled by a defect level of donor type, with an ionization energy of about 0.060eV. The possible origin of this defect is discussed.

Keywords

Polycrystalline thin films, Cadmium sulfide, Hall effect, Proton irradiation.

Citation

L. ION, V. GHENESCU, S. IFTIMIE, V. A. ANTOHE, A. RADU, M. GUGIU, G. VELISA, O. PORUMB, S. ANTOHE, Temperature dependent resistivity and Hall effect in proton irradiated CdS thin films, Optoelectronics and Advanced Materials - Rapid Communications, 4, 8, August 2010, pp.1114-1117 (2010).

Submitted at: June 17, 2010

Accepted at: Aug. 12, 2010