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R. YILDIRIM1, H. GÜÇLÜ YAVUZCAN1, F. V. ÇELEBI2,* , L. GOKREM3
In this study, Rolletti stability criterion (K) analysis is performed based on the scattering parameters of GaN based High Electron Mobility Transistor (HEMT). The change in K and D (Delta, D) with temperature is analyzed and the relationship between K andD is determined. The frequency region where the effective temperature change is determined by indicating the critical points for the stability of HEMT. In addition to that, best values of K andD are specified along with the boundary values and the region where HEMT works stable is determined.
HEMT, Stability, Rolletti, Temperature, GaN HEMT.
R. YILDIRIM, H. GÜÇLÜ YAVUZCAN, F. V. ÇELEBI, L. GOKREM, Temperature dependent Rolletti stability analysis of GaN HEMT, Optoelectronics and Advanced Materials - Rapid Communications, 3, 8, August 2009, pp.781-786 (2009).
Submitted at: March 12, 2009
Accepted at: July 31, 2009
Optoelectronics and Advanced Materials - Rapid Communications
(2023): 0.5 - 2023 Journal Citation Reports (Clarivate Analytics, 2024)
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