Our site saves small pieces of text information (cookies) on your device in order to deliver better content and for statistical purposes. You can disable the usage of cookies by changing the settings of your browser. By browsing our site without changing the browser settings you grant us permission to store that information on your device.
B. KINACI1,* , T. ASAR1, Y. ÖZEN1, S. ÖZÇELİK1
In this study, the current-voltage (I-V) characteristics of Au/TiO2/n-Si Schottky barrier diodes (SBDs) were examined at high temperatures. TiO2 thin films were deposited on polycrystalline n-type Silicon (Si) substrate using DC magnetron sputtering system. In order to improve the crystal quality, thermal anneling process were done at 700 0C. The electrical parameters such as barrier height (b), ideality factor (n) and series resistance (Rs) of Au/TiO2/n-Si SBDs have been investigated by using forward and reverse bias I-V measurements in the temperature range of 340-400 K by steps of 20 K. Also, the values of Rs and b were determined by using Cheung’s and Norde methods. It was seen that there was a good agreement between the values of Rs and b obtained from the forward bias ln(I-V) curves by applying Cheung’s and Norde methods..
Schottky barrier diode, TiO2, Temperature dependence, DC magnetron sputtering.
B. KINACI, T. ASAR, Y. ÖZEN, S. ÖZÇELİK, The analysis of Au/Ti02/n-Si Schottky barrier diode at high temperatures using I-V characteristics, Optoelectronics and Advanced Materials - Rapid Communications, 5, 4, April 2011, pp.434-437 (2011).
Submitted at: March 17, 2011
Accepted at: April 11, 2011
Optoelectronics and Advanced Materials - Rapid Communications
(2023): 0.5 - 2023 Journal Citation Reports (Clarivate Analytics, 2024)
Active accounts were imported to the new platform and assigned a random password by default. In order to access your account you need to access the login page and go through the Lost Password dialog (involves the system sending you an email with instructions) in order to reset your password. This step is necessary as passwords are kept in hashed form and the new platform uses modern hashing algorithms incompatible with the previous ones.