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GUOLIANG ZHANG1, YUN ZENG1,* , YONGMING YAN1, YONGQING LENG1
Both the light and dark current-voltage (I-V) characteristics of n-InGaZnO/p-Si photodiodes (PD) fabricated by radio frequency magnetron sputtering of n-IGZO films on p-Si substrates at 25 ℃, 200 ℃ and 400 ℃ have been studied. The dark I-V characteristic indicates the existence of negatively charged interface states at Si-InGaZn oxide interface layer (IL). A theoretical model with IL included is developed and it is found that this model explains the light I-V characteristics observed here well. According to our model, the unique behavior of these PDs is attributed to the impurity concentration of IGZO film and the low electron mobility and deficiency of conduction electrons at IL which causes electron accumulation at interface..
Photodiode, RF magnetron sputtering, Photoelectric effect, Interface state.
GUOLIANG ZHANG, YUN ZENG, YONGMING YAN, YONGQING LENG, The current-voltage characteristics of n-InGaZnO/p-Si heterojunctions photodiode, Optoelectronics and Advanced Materials - Rapid Communications, 5, 9, September 2011, pp.1011-1016 (2011).
Submitted at: Aug. 24, 2011
Accepted at: Sept. 15, 2011
Optoelectronics and Advanced Materials - Rapid Communications
(2023): 0.5 - 2023 Journal Citation Reports (Clarivate Analytics, 2024)
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