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D. NITHYAPRAKASH1,* , N. PUNITHAVENI2, J. CHANDRASEKARAN1
Thin films of In2Se3 were prepared by thermal evaporation. X-ray diffraction indicated that the as grown films were amorphous in nature and became polycrystalline γ- In2Se3 films after annealing. Optical properties of the films, investigated by using spectrophotometer transmittance spectra in the wavelength range 200-2500 nm. The increase in the value of Eg opt with annealed treatment is interpreted in terms of the density of states model as proposed by Mott and Davis..
In2Se3 thin films, Annealing Temperature, Structural: optical properties, Vacuum evaporation.
D. NITHYAPRAKASH, N. PUNITHAVENI, J. CHANDRASEKARAN, The effect of annealing temperature on the structural and optical properties of In2Se3 thin films, Optoelectronics and Advanced Materials - Rapid Communications, 4, 3, March 2010, pp.357-360 (2010).
Submitted at: Jan. 29, 2010
Accepted at: March 12, 2010
Optoelectronics and Advanced Materials - Rapid Communications
(2023): 0.5 - 2023 Journal Citation Reports (Clarivate Analytics, 2024)
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