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J. M. Al ABBAS1,* , P. NARIN1, G. ATMACA1, E. KUTLU1, B. SARIKAVAK-LISESIVDIN1, S. B. LISESIVDIN1
In this study, we have numerically investigated the two-dimensional electron gas (2DEG) carrier densities and electron probability densities of pseudomorphically grown ultrathin-barrier AlN/GaN heterostructures using self-consistent solutions of one-dimensional, non-linear Schrödinger–Poisson equations. In these calculations, we have focused on three different AlN/GaN heterostructures included fully undoped, the only Si-doped cap layer and the only Si-doped barrier layer. As a result of the calculations, it was found that doping of AlN barrier layer more effective than other cases on the 2DEG carrier density and the doping of GaN cap layer has not a significant effect on the 2DEG probability densities..
GaN, AlN, Ultrathin Heterostructures, 2DEG.
J. M. Al ABBAS, P. NARIN, G. ATMACA, E. KUTLU, B. SARIKAVAK-LISESIVDIN, S. B. LISESIVDIN, The effect of doping in different layers on 2DEG for ultrathin-barrier AlN/GaN heterostructures, Optoelectronics and Advanced Materials - Rapid Communications, 11, 5-6, May-June 2017, pp.328-331 (2017).
Submitted at: June 15, 2016
Accepted at: June 7, 2017
Optoelectronics and Advanced Materials - Rapid Communications
(2022): 0.5 - 2022 Journal Citation Reports (Clarivate Analytics, 2023)
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