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R. GRASIN1, C. RUSU1, R. DUDRIC1, S. MICAN1, M. NEUMANN2, R. TETEAN1,*
The effects of gadolinium doping on the electronic properties of half-Heusler compound NiMnSb are presented. Band structure calculations show that the half-metallic properties are completely conserved if Gd atoms substitute the manganese ones. This effect is determined by the coupling between the Gd (4f) spin and the Mn (3d) itinerant electron spins. The antiparallel coupling of Gd and transition metal magnetic moments was found to be more favourable. The structural and XPS analysis confirm that the gadolinium atoms occupy lattice sites..
Heusler alloys, Electronic structure calculations, X-ray photoelectron spectroscopy.
R. GRASIN, C. RUSU, R. DUDRIC, S. MICAN, M. NEUMANN, R. TETEAN, The effect of Gd doping on electronic properties of NiMnSb compounds, Optoelectronics and Advanced Materials - Rapid Communications, 6, 1-2, January-February 2012, pp.169-173 (2012).
Submitted at: Nov. 29, 2011
Accepted at: Feb. 20, 2012
Optoelectronics and Advanced Materials - Rapid Communications
(2023): 0.5 - 2023 Journal Citation Reports (Clarivate Analytics, 2024)
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