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A. BENGI1,* , T. S. MAMMADOV1,2, S. ÖZÇELIK1, Ş. ALTINDAL1
The forward and reverse bias current-voltage (I-V) characteristics of Au/n-GaAs/GaAs have been measured in the temperature range of 79-400 K. The effects of density of interface states Nss and the series resistance Rs of structures on the electrical characteristics are investigated as a function of temperature. While the zero-bias barrier ΦBo decrease, the ideality factor n increases with a decrease in temperature; the changes are quite significant at low temperatures. Experimental results show that the Rs and Nss cause non-ideal behavior on I-V characteristics. The Rs is significant especially in the downward curvature of the forward bias I-V characteristics, but the Nss are significant in both the linear and non-linear regions of the I-V characteristics. The downward concave curvature of the forward bias I-V curves at sufficiently high voltages has been attributed to the presence of Rs, apart from the Nss that are in equilibrium with the semiconductor. The high value of the ideality factor n and the Schottky barrier height ΦBo of these structures were attributed to the presence of an interfacial insulator layer between metal and semiconductor. The density of interface states distribution profiles (Nss) as a function of (Ec-Ess) was obtained from the forward bias I-V measurements by taking into account the bias dependence of the effective barrier height Φe and ideality factor n at different temperatures for the sample on the order ~1013 eV-1cm-2. In addition, the values of n, ΦBo and Rs of these structures have been obtained at each temperatures using Cheung’s functions..
Schottky barrier, Gallium arsenide, Density of interface states, Series resistance, Cheung’s functions.
A. BENGI, T. S. MAMMADOV, S. ÖZÇELIK, Ş. ALTINDAL, The effect of series resistance and surface states on current-voltage (I-V) characteristics of Au/n-GaAs/GaAs structures at wide temperature range, Optoelectronics and Advanced Materials - Rapid Communications, 3, 11, November 2009, pp.1155-1160 (2009).
Submitted at: Aug. 26, 2009
Accepted at: Oct. 29, 2009
Optoelectronics and Advanced Materials - Rapid Communications
(2023): 0.5 - 2023 Journal Citation Reports (Clarivate Analytics, 2024)
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