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J. Y. LIU1, L. ZHANG1, S. J. GUO1, L. G. WANG1,*
Recently, it has been demonstrated that the presence of spatial correlation between the disordered transport site energies in organic semiconductors is known to affect the charge carrier mobility. However, it is not established whether the site energies are actually spatially correlated in relevant materials. In this paper, we study the hole transport in the poly (2 -methoxy-5-(3’, 7’-dimethyloctyloxy)-p-phenylene vinylene) (OC1C10-PPV) and an analysis of the temperature dependent and layer thickness dependent current density versus voltage ( J V ) characteristics is proposed. Consistent descriptions with equal quality are obtained by using our recently introduced improved extended Gaussian disorder model (IEGDM) and the extended correlated disorder model (ECDM), within which spatial correlation between the site energies is absent and is included, respectively. We present a comparison of the model parameters between the analysis of the J V characteristics using the IEGDM and the ECDM. It is found that the intersite distance obtained using the IEGDM is more realistic than the value obtained in the case of the ECDM. We view this as an indication that spatial correlation between the site energies is absent or plays a minor role in disordered semiconducting polymers..
Hole Transport, Spatially correlated disorder, Intersite distance, Conjugated polymers.
J. Y. LIU, L. ZHANG, S. J. GUO, L. G. WANG, The effect of spatially correlated disorder on the hole transport in disordered semiconducting polymers, Optoelectronics and Advanced Materials - Rapid Communications, 13, 5-6, May-June 2019, pp.333-337 (2019).
Submitted at: Nov. 18, 2018
Accepted at: June 14, 2019
Optoelectronics and Advanced Materials - Rapid Communications
(2023): 0.5 - 2023 Journal Citation Reports (Clarivate Analytics, 2024)
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